| PART |
Description |
Maker |
| HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes
3.3V Differential Transceiver 8-PDIP -40 to 85
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
COILTRONICS RoHS Compliant: Yes 1Gbit的（128Mx8bit / 64Mx16bit）NAND闪存
Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY27US081G1M HY27US161G1M |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
|
Hynix Semiconductor
|
| HY27LF081G2M-TCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
HYNIX
|
| HY27SF081G2M |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor
|
| HY27SF161G2M |
(HY27UF(08/16)1G2M / HY27SF(08/16)1G2M) 1Gbit (128Mx8bit/64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor
|
| H55S1G62MFP-60 H55S1G62MFP-75 H55S1G62MFP-A3 |
1Gb (64Mx16bit) Mobile SDRAM
|
Hynix Semiconductor
|
| H5MS1G22MFP |
1Gbit MOBILE DDR SDRAM
|
Hynix Semiconductor
|
| AMS73CAG01168RAUJH7 AMS73CAG01408RAUJH7 AMS73CAG01 |
HIGH PERFORMANCE 1Gbit DDR3 SDRAM
|
Advanced Monolithic Systems Ltd
Advanced Monolithic Systems...
|
| HYB18T1G400AF-5 HYB18T1G800AF-5 HYB18T1G160AF-5 HY |
1Gbit Double Data Rate 2 (DDR2) Components
|
Infineon
|
| H5MS1G22MFP-L3M H5MS1G32MFP-L3M H5MS1G22MFP-E3M H5 |
1Gbit MOBILE DDR SDRAM based on 8M x 4Bank x32 I/O
|
Hynix Semiconductor
|
